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Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Identifieur interne : 00FE31 ( Main/Repository ); précédent : 00FE30; suivant : 00FE32

Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Auteurs : RBID : Pascal:01-0345787

Descripteurs français

Pascal (Inist)
- 7867D, 7855C, 4255P, 4260D, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Laser puits quantique, Puits quantique semiconducteur, Résonateur cavité laser, Orientation cristalline.

English descriptors

KwdEn :
- Crystal orientation, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Laser cavity resonators, Quantum well lasers, Semiconductor quantum wells.

Abstract

The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature. Crystal orientation is confirmed to be a related parameter to the optical gain for a GaN-based strained structure. © 2001 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Chen, Chii Chang" uniqKey="Chen C">Chii-Chang Chen</name>
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<author><name sortKey="Hsieh, Kun Long" uniqKey="Hsieh K">Kun-Long Hsieh</name>
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<author><name sortKey="Sheu, Jinn Kong" uniqKey="Sheu J">Jinn-Kong Sheu</name>
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<author><name sortKey="Chi, Gou Chung" uniqKey="Chi G">Gou-Chung Chi</name>
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<author><name sortKey="Jou, Ming Juinn" uniqKey="Jou M">Ming-Juinn Jou</name>
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<front><div type="abstract" xml:lang="en">The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature.  Crystal orientation  is confirmed to be a related parameter to the optical gain for a GaN-based strained structure. © 2001 American Institute of Physics.</div>
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Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Descripteurs français

English descriptors

Abstract

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